Gallium(III) oxide
ALDRICH/215066 - ≥99.99% trace metals basis
Synonym: Gallium trioxide
CAS Number: 12024-21-4
Empirical Formula (Hill Notation): Ga2O3
Molecular Weight: 187.44
EC Number: 234-691-7
MDL Number: MFCD00011020
Linear Formula: Ga2O3
Product Type: Chemical
This picture is provided solely for illustration purposes. Optical properties of the actual product may deviate. Relevant product information is printed on labeled products and other accompanying or available information material.
This image depicts SKU: 215066-50G
This image depicts SKU: 215066-50G
This picture is provided solely for illustration purposes. Optical properties of the actual product may deviate. Relevant product information is printed on labeled products and other accompanying or available information material.
This image depicts SKU: 215066-10G
This image depicts SKU: 215066-10G
| assay | ≥99.99% trace metals basis |
| density | 5.88 g/mL at 25 °C |
| form | (crystalline powder) |
| InChI | 1S/2Ga.3O |
| InChI key | QZQVBEXLDFYHSR-UHFFFAOYSA |
| Quality Level | 100  |
| reaction suitability | reagent type: catalyst core: gallium |
| SMILES string | O=[Ga]O[Ga]=O |
| Application: | Ga2O3 is widely used as a host material for the fabrication of electroluminescent devices. For example, europium-doped Ga2O3 thin films can be used as a light-emitting layer to fabricate an optically transparent electroluminescent device. Due to its distinct optical and electrical properties like moderate conductivity and high laser damage threshold, Ga2O3 can be used in laser-driven electron accelerators, low-loss plasmonics, and Si-based dielectric laser accelerators. It can also be used as an effective catalyst for the dehydrogenation of propane to propene. |
| Application: | Starting material for the preparation of Sr2CuGaO3S, an example of a rare square pyramidal gallium. |
| General description: | Gallium(III) oxide (Ga2O3) is a wide band gap semiconductor that belongs to a family of transparent semiconducting oxides (TSO). It can form different polymorphs such as α-,β-, γ-, δ-, and ε-. Polycrystalline and nanocrystalline Ga2O3 can be prepared using several methods such as chemical vapor deposition, thermal vaporization, and sublimation, molecular beam epitaxy, melt growth, etc. It is widely used as a functional material in various applications including optoelectronics, chemical sensors, catalysis, semiconductor devices, field-effect transistors, and many others. |
| Packaging: | 10, 50 g in poly bottle |
| RIDADR | NONH for all modes of transport |
| WGK Germany | WGK 2 |
| Flash Point(F) | Not applicable |
| Flash Point(C) | Not applicable |
| Purity | ≥99.99% trace metals basis |
| Density | 5.88 g/mL at 25 °C |
| UNSPSC | 12352300 |