Silicon tetrachloride
ALDRICH/289388 - 99.998% trace metals basis
Synonym: STC; Tetrachlorosilane
CAS Number: 10026-04-7
Empirical Formula (Hill Notation): Cl4Si
Molecular Weight: 169.90
EC Number: 233-054-0
MDL Number: MFCD00011229
Linear Formula: SiCl4
Product Type: Chemical
| assay | 99.998% trace metals basis |
| bp | 57.6 °C (lit.) |
| density | 1.483 g/mL at 25 °C (lit.) |
| form | liquid |
| InChI | 1S/Cl4Si/c1-5(2,3)4 |
| InChI key | FDNAPBUWERUEDA-UHFFFAOYSA |
| mp | −70 °C (lit.) |
| Quality Level | 200  |
| reaction suitability | core: silicon |
| SMILES string | Cl[Si](Cl)(Cl)Cl |
| vapor density | 5.86 (vs air) |
| vapor pressure | 420 mmHg ( 37.7 °C) |
| Application: | Silicon tetrachloride can be used: • A precursor in the chemical vapor deposition (CVD) process to deposit silicon onto graphite substrates. This approach results development of high-performance anodes for lithium-ion batteries. • A precursor material in the hydrogen thermal plasma (H-plasma) process to synthesize silicon nanospheres, which are suitable for use as anode materials in lithium-ion batteries. |
| Features and Benefits: | Silicon tetrachloride exhibits: • High Purity (99.998%): Ensures minimal contamination, crucial for optics and photonics applications • Ideal for Semiconductor applications: Its ultra-high purity supports fabrication of advanced integrated circuits, wafers, and solar cells |
| General description: | Silicon tetrachloride is a highly reactive and volatile inorganic compound widely utilized as a precursor in both solution-based and vapor-phase deposition processes. It plays a critical role in the synthesis of high-purity silicon-based materials such as silicon dioxide (SiO2) and silicon nitride (Si₃N₄), which are essential in a broad range of high-performance applications such as semiconductor industry, optics and photonics. Additionally, it is also used in the manufacture of high-purity silica glass, advanced ceramics, and energy storage components. |
| Packaging: | 100, 800 mL in Sure/Seal™ |
| Symbol |   GHS05,GHS06 |
| Signal word | Danger |
| Hazard statements | H301 + H331 - H314 - H335 |
| Precautionary statements | P261 - P270 - P280 - P303 + P361 + P353 - P304 + P340 + P310 - P305 + P351 + P338 |
| Hazard Codes | C |
| Risk Statements | 14-20/22-35-37 |
| Safety Statements | 7/8-26 |
| RIDADR | UN 1818 8 / PGII |
| WGK Germany | WGK 1 |
| Supplemental Hazard Statements | EUH014 - EUH071 |
| Purity | 99.998% trace metals basis |
| bp | 57.6 °C (lit.) |
| mp | −70 °C (lit.) |
| Density | 1.483 g/mL at 25 °C (lit.) |
| UNSPSC | 12352103 |