Tantalum(V) ethoxide
ALDRICH/339113 - 99.98% trace metals basis
Synonym: Pentaethoxytantalum; Pentaethyl tantalate; Tantalum ethylate; Tantalum pentaethoxide; Tantalum(V) ethoxide
CAS Number: 6074-84-6
Empirical Formula (Hill Notation): C10H25O5Ta
Molecular Weight: 406.25
MDL Number: MFCD00049785
Linear Formula: Ta(OC2H5)5
Product Type: Chemical
This picture is provided solely for illustration purposes. Optical properties of the actual product may deviate. Relevant product information is printed on labeled products and other accompanying or available information material.
This image depicts SKU: 339113-10G
This image depicts SKU: 339113-10G
| assay | 99.98% trace metals basis |
| bp | 155 °C/0.01 mmHg (lit.) |
| density | 1.566 g/mL at 25 °C (lit.) |
| form | liquid |
| impurities | <2 wt. % toluene |
| InChI | 1S/5C2H5O.Ta/c5*1-2-3;/h5 |
| InChI key | HSXKFDGTKKAEHL-UHFFFAOYSA |
| mp | 21 °C (lit.) |
| Quality Level | 100  |
| reaction suitability | core: tantalum |
| reagent type: catalyst | |
| refractive index | n |
| SMILES string | CCO[Ta](OCC)(OCC)(OCC)OCC |
| Application: | Tantalum ethoxide is used as a precursor • To synthesize modified tantalum-alkoxo complexes, enabling the fabrication of Ta₂O₅ thin films with tunable optical properties. • In the sol–gel synthesis of tantalum oxide nanoparticles, which, when doped with rare earth elements, form wide band gap semiconductors showing both stokes and anti-stokes visible luminescence. • To synthesize hollow TaOx nanoshells in the formation of Bi₂S₃@TaOx-HA core–shell nanoparticles, which serve as multifunctional theranostic agents for CT/photoacoustic imaging and enhanced photothermal cancer therapy. |
| Features and Benefits: | • 99.98% purity on a trace metals basis ensures minimal contamination for critical applications, resulting in superior quality materials. • Low metal impurities (< 250.0 ppm) enhance sol-gel formation for the synthesis of nanoparticles. |
| General description: | Tantalum(V) ethoxide is primarily used to produce tantalum oxide thin films for applications in optics, semiconductors, and electrochromic devices. These films possess high refractive index and excellent electrical insulation properties. Additionally, when tantalum is alloyed with other metals, it gains enhanced strength, ductility, and corrosion resistance, making it highly suitable for applications in electronics and advanced materials. Our 99.98% trace metals basis of Tantalum(V) ethoxide is suitable for the synthesis of tantalum oxide by chemical vapor deposition (CVD). |
| Packaging: | 10, 100 g in poly bottle |
| Symbol |  GHS02 |
| Signal word | Warning |
| Hazard statements | H226 |
| Precautionary statements | P210 - P233 - P240 - P241 - P242 - P243 |
| Hazard Codes | C |
| Risk Statements | 10-34 |
| Safety Statements | 16-26-36/37/39-45 |
| RIDADR | UN 2920 3(8) / PGII |
| WGK Germany | WGK 1 |
| Flash Point(F) | 84.2 °F - closed cup |
| Flash Point(C) | 29 °C - closed cup |
| Purity | 99.98% trace metals basis |
| bp | 155 °C/0.01 mmHg (lit.) |
| mp | 21 °C (lit.) |
| Density | 1.566 g/mL at 25 °C (lit.) |
| Refractive Index | n |
| UNSPSC | 12352103 |