Gallium(III) acetylacetonate
ALDRICH/393541 - 99.99% trace metals basis
Synonym: Ga(acac)3; Gallium(III) 2,4-pentanedionate
CAS Number: 14405-43-7
Empirical Formula (Hill Notation): C15H21GaO6
Molecular Weight: 367.05
EC Number: 238-377-0
MDL Number: MFCD00013492
Linear Formula: [CH3COCH=C(O-)CH3]3Ga
Product Type: Chemical
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This image depicts SKU: 393541-5G
This image depicts SKU: 393541-5G
| assay | 99.99% trace metals basis |
| form | solid |
| InChI | 1S/3C5H8O2.Ga/c3*1-4(6)3- |
| InChI key | ZVYYAYJIGYODSD-LNTINUHCSA |
| mp | 196-198 °C (dec.) (lit.) |
| Quality Level | 100  |
| reaction suitability | core: gallium |
| reagent type: catalyst | |
| SMILES string | CC(=O)C=C(C)O[Ga](OC(C |
| Application: | Gallium(III) acetylacetonate can be used: • As a precursor to synthesize nanocrystalline gallium oxide spinels via solvothermal process for various applications like photocatalysis, battery cathode materials and electrocatalysis. • To fabricate LiGa alloy layer on Li metal anode from in-situ electroreduction. It suppresses the anode dendrite formation in lithium-sulfur batteries. • To prepare highly efficient gallium-platinum (GaPt3) nanoparticles hot-solvent synthesis which act as electrocatalysts for hydrogen evolution reaction. • To synthesize γ-Ga2O3 nanocrystals for fabricating electron-transporting layer for perovskite solar cells. It forms effective interfacial connections with the perovskite top layer, enhancing the efficiency of charge transport. |
| Features and Benefits: | • The high purity (99.99% trace metals basis) ensures that no impurities interfere with the synthesis process, leading to higher yields and better quality of the gallium compounds. • High purity enhances catalytic activity and selectivity, reducing the formation of by-products and improving overall reaction efficiency. • The absence of trace metal impurities ensures the integrity and performance of the thin films, resulting in improved device efficiency and longevity of optoelectronic devices. • The high purity of the precursor minimizes defects and impurities in the semiconductor materials, enhancing their electrical properties and performance. |
| General description: | Gallium(III) acetylacetonate is a white to off-white crystalline solid with purity (99.99% trace metals basis) widely used as a precursor for thin films and nanomaterials. It is soluble in organic solvents such as ethanol, acetone, and toluene, making it suitable for solution-based nanoparticle synthesis. Its thermal stability, with decomposition occurring above ~200 °C, allows for controlled gallium release, making it ideal for the synthesis of nanomaterials and oxide layers. It is commonly employed in metal-organic chemical vapor deposition (CVD) and atomic layer deposition (ALD) to produce gallium oxide (Ga₂O₃) and gallium nitride (GaN) thin films, which are essential for electronic and optoelectronic applications. |
| Packaging: | 5, 25 g in poly bottle |
| Symbol |   GHS07,GHS08 |
| Signal word | Warning |
| Hazard statements | H302 + H312 + H332 - H315 - H319 - H335 - H351 |
| Precautionary statements | P280 - P301 + P312 - P302 + P352 + P312 - P304 + P340 + P312 - P305 + P351 + P338 - P308 + P313 |
| Hazard Codes | Xn |
| Risk Statements | 20/21/22-36/37/38-40 |
| Safety Statements | 26-36/37/39 |
| RIDADR | NONH for all modes of transport |
| WGK Germany | WGK 3 |
| Flash Point(F) | Not applicable |
| Flash Point(C) | Not applicable |
| Purity | 99.99% trace metals basis |
| mp | 196-198 °C (dec.) (lit.) |
| UNSPSC | 12352103 |