Hexamethyldigermanium(IV)
ALDRICH/447609 - technical grade
Synonym: 1,1,1,2,2,2-
CAS Number: 993-52-2
Empirical Formula (Hill Notation): C6H18Ge2
Molecular Weight: 235.49
MDL Number: MFCD00047989
Linear Formula: (CH3)3GeGe(CH3)3
Product Type: Chemical
| bp | 137-138 °C (lit.) |
| density | 1.175 g/mL at 25 °C (lit.) |
| form | liquid |
| grade | technical grade |
| InChI | 1S/C6H18Ge2/c1-7(2,3)8(4, |
| InChI key | HLEHOFVKHRHBQI-UHFFFAOYSA |
| mp | −40 °C (lit.) |
| Quality Level | 200  |
| reaction suitability | core: germanium |
| refractive index | n |
| SMILES string | C[Ge](C)(C)[Ge](C)(C)C |
| Application: | Hexamethyldigermanium can be used as: • A precursor in CVD processes for depositing germanium thin films. Its volatility and thermal properties enable the formation of uniform Ge layers on various substrates, which are crucial for semiconductor devices. • A precursor in the synthesis of germanium-based nanostructures, where its controlled decomposition can lead to the formation of nanowires or nanoparticles with applications in electronics and photonics. • A precursor material in the preparation of germanium-containing polymers or materials, where its reactivity can be harnessed to introduce Ge units into polymer backbones or frameworks. |
| Features and Benefits: | Hexamethyldigermanium can be used as: • A precursor in CVD processes for depositing germanium thin films. Its volatility and thermal properties enable the formation of uniform Ge layers on various substrates, which are crucial for semiconductor devices. • A precursor in the synthesis of germanium-based nanostructures, where its controlled decomposition can lead to the formation of nanowires or nanoparticles with applications in electronics and photonics. • A precursor material in the preparation of germanium-containing polymers or materials, where its reactivity can be harnessed to introduce Ge units into polymer backbones or frameworks. |
| General description: | Hexamethyldigermanium (Ge₂(CH₃)₆) is a volatile, moisture-sensitive organogermanium compound characterized by its Ge–Ge bond and six methyl groups. This compound exhibits high thermal stability and volatility, making it a promising candidate as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes for the fabrication of germanium-containing thin films. Its organometallic nature allows for controlled decomposition pathways, facilitating the deposition of high-purity germanium layers essential in semiconductor and optoelectronic applications. |
| Packaging: | 1 g in glass bottle |
| Symbol |   GHS02,GHS07 |
| Signal word | Danger |
| Hazard statements | H225 - H302 + H312 + H332 |
| Precautionary statements | P210 - P233 - P280 - P301 + P312 - P303 + P361 + P353 - P304 + P340 + P312 |
| Hazard Codes | F,Xn |
| Risk Statements | 11-20/21/22 |
| Safety Statements | 16-36 |
| RIDADR | UN 1993BF 3 / PGII |
| WGK Germany | WGK 3 |
| Flash Point(F) | 57.2 °F - closed cup |
| Flash Point(C) | 14 °C - closed cup |
| bp | 137-138 °C (lit.) |
| mp | −40 °C (lit.) |
| Density | 1.175 g/mL at 25 °C (lit.) |
| Refractive Index | n |
| UNSPSC | 12352103 |