Disilane
ALDRICH/463043 - electronic grade
Synonym: Disilicane; Disilicoethane; Disilicon hexahydride; Silicoethane; Silicon hydride (Si2 H6 )
CAS Number: 1590-87-0
Empirical Formula (Hill Notation): H6Si2
Molecular Weight: 62.22
EC Number: 216-466-5
MDL Number: MFCD00054678
Linear Formula: Si2H6
Product Type: Chemical
| assay | ≥99.998% chemical purity basis |
| bp | −14.5 °C (lit.) |
| form | gas |
| grade | electronic grade |
| impurities | ≤50 ppm Higher silanes |
| <0.2 ppm Chlorosilanes | |
| <1 ppm Argon (Ar) + Oxygen (O2) | |
| <1 ppm Carbon dioxide (CO2) | |
| <1 ppm Nitrogen (N2) | |
| <1 ppm THC | |
| <1 ppm Water | |
| <5 ppm Siloxanes | |
| InChI | 1S/H6Si2/c1-2/h1-2H3 |
| InChI key | PZPGRFITIJYNEJ-UHFFFAOYSA |
| mp | −132.6 °C (lit.) |
| SMILES string | [SiH3][SiH3] |
| transition temp | critical temperature 150.9 °C |
| Application: | Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics. |
| Features and Benefits: | Disilane is used for the deposition of amorphous silicon, epitaxial silicon and silicon based dielectrics via rapid low-temperature chemical vapor depsition (LTCVD). Disilane is also used in the epitaxial growth of SiGe films by molecular beam epitaxy (MBE) in conjunction with solid sources of germanium. Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics. |
| General description: | Atomic number of base material: 14 Silicon |
| Packaging: | 20 g in stainless steel cylinder |
| Symbol |     GHS02,GHS04,GHS07,GHS08 |
| Signal word | Danger |
| Hazard statements | H220 - H280 - H312 - H315 - H319 - H332 - H334 - H335 |
| Precautionary statements | P210 - P261 - P280 - P305 + P351 + P338 - P342 + P311 - P410 + P403 |
| Hazard Codes | F,Xn |
| Risk Statements | 17-20/21-36/37/38-42 |
| Safety Statements | 16-24-26-36/37/39 |
| RIDADR | UN 3161 2.1 |
| WGK Germany | WGK 3 |
| Flash Point(F) | < 50.0 °F - closed cup |
| Flash Point(C) | < 10 °C - closed cup |
| Purity | ≥99.998% chemical purity basis |
| bp | −14.5 °C (lit.) |
| mp | −132.6 °C (lit.) |
| UNSPSC | 12352103 |