Tetrakis(dimethylamido)titanium(IV)

ALDRICH/469858 - 99.999% trace metals basis

Synonym: TDMAT; Tetrakis(dimethylamino)titanium(IV)

CAS Number: 3275-24-9
Empirical Formula (Hill Notation): C₈H₂₄N₄Ti
Molecular Weight: 224.17
EC Number: 221-904-3
MDL Number: MFCD00014861
Linear Formula: [(CH₃)₂N]₄Ti
Product Type: Chemical

Catalog Number	PKG Qty.	Price	Quantity


45-469858-5G	5 g	$263.00 1/EA		Add To Favorites
45-469858-25G	25 g	$764.00 1/EA		Add To Favorites

Properties
Descriptions
Safety Info.
Basic Data

assay	99.999% trace metals basis
bp	50 °C/0.5 mmHg (lit.)
density	0.947 g/mL at 25 °C (lit.)
form	liquid
InChI	1S/4C2H6N.Ti/c41-3-2;/h41-2H3;/q4*-1;+4
InChI key	MNWRORMXBIWXCI-UHFFFAOYSA-N
Quality Level	200
reaction suitability	core: titanium
SMILES string	CN(C)[Ti](N(C)C)(N(C)C)N(C)C

Application:	Tetrakis(dimethylamido)titanium(IV) (TDMAT) is a precursor to titanium nitride (TiN) thin films by organometallic chemical vapor deposition (OMCVD)and titanium dioxide thin films by atomic layer deposition (ALD).TDMAT undergoes exothermal reaction with excess cyclopentadiene to yield tris(dimethylamido)(η5-cyclopentadienyl)titanium(IV).
Features and Benefits:	• 99.999% trace metals basis ensures superior quality of deposited films, with minimal defects and consistent properties, critical for microelectronics and optoelectronics applications. • High purity reduces the risk of contamination during the coating process, leading to enhanced adhesion, durability, and performance of the final products. • The absence of impurities allows for the precise control of particle size and morphology, improving the effectiveness of nanoparticles in targeted applications. • High purity ensures that electronic properties are not compromised by impurities, enhancing device performance and reliability. • Controlling heavy metals at ppb levels ensures effective contamination control, regulatory compliance, and optimized performance.
General description:	Tetrakis(dimethylamido)titanium(IV) [Ti(N(CH₃)₂)₄], or TDMAT, is a volatile, colourless to pale yellow liquid. Its high volatility and thermal stability make it suitable for chemical vapor deposition (CVD) and atomic layer deposition (ALD), enabling the controlled deposition of titanium-based films such as titanium nitride (TiN) and titanium dioxide (TiO₂). It also supports uniform film growth at low temperatures, making it compatible with temperature-sensitive substrates
Packaging:	5, 25 g in ampule

Symbol	GHS02,GHS05
Signal word	Danger
Hazard statements	H225 - H260 - H314
Precautionary statements	P210 - P223 - P231 + P232 - P280 - P303 + P361 + P353 - P305 + P351 + P338
Hazard Codes	F,C
Risk Statements	11-14-34
Safety Statements	16-26-36/37/39-43-45
RIDADR	UN3398 - DOT UN3399 class 4.3 - PG 1 - Organometallic substance,
WGK Germany	WGK 3
Flash Point(F)	-22.0 °F - closed cup
Flash Point(C)	-30 °C - closed cup
Supplemental Hazard Statements	EUH014

Purity	99.999% trace metals basis
bp	50 °C/0.5 mmHg (lit.)
Density	0.947 g/mL at 25 °C (lit.)
UNSPSC	12352103

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