Gallium nitride
ALDRICH/481769 - 99.9% trace metals basis
Synonym: Gallium mononitride; Gallium mononitride (GaN)
CAS Number: 25617-97-4
Empirical Formula (Hill Notation): GaN
Molecular Weight: 83.73
EC Number: 247-129-0
MDL Number: MFCD00016108
Linear Formula: GaN
Product Type: Chemical
| assay | 99.9% trace metals basis |
| form | powder |
| InChI | 1S/Ga.N |
| InChI key | JMASRVWKEDWRBT-UHFFFAOYSA |
| mp | 800 °C (lit.) |
| Quality Level | 100 ![]() |
| SMILES string | N#[Ga] |
| Application: | Gallium nitride (GaN) is a wide band gap semiconducting material, which can be used in the development of a variety of electronic devices, such as light emitting diodes (LEDs), and field effect transistors (FETs). It can also be used as a transition metal dopant for spintronics-based applications. |
| Packaging: | 10, 50 g in glass bottle |
| Symbol | GHS07 |
| Signal word | Warning |
| Hazard statements | H317 |
| Precautionary statements | P280 |
| RIDADR | NONH for all modes of transport |
| WGK Germany | WGK 3 |
| Flash Point(F) | Not applicable |
| Flash Point(C) | Not applicable |
| Purity | 99.9% trace metals basis |
| mp | 800 °C (lit.) |
| UNSPSC | 12352300 |


