Tetrakis(ethylmethylamido)hafnium(IV)

ALDRICH/553123 - ≥99.99% trace metals basis

Synonym: TEMAH; Tetrakis(ethylmethylamino)hafnium(IV)

CAS Number: 352535-01-4
Empirical Formula (Hill Notation): C₁₂H₃₂HfN₄
Molecular Weight: 410.90
MDL Number: MFCD03427130
Linear Formula: [(CH₃)(C₂H₅)N]₄Hf
Product Type: Chemical

Catalog Number	PKG Qty.	Price	Quantity


45-553123-5ML	5 mL	$370.00 1/EA		Add To Favorites
45-553123-25ML	25 mL	$1210.00 1/EA		Add To Favorites

Properties
Descriptions
Safety Info.
Basic Data

assay	≥99.99% trace metals basis
bp	78 °C/0.01 mmHg (lit.)
density	1.324 g/mL at 25 °C (lit.)
form	liquid
impurities	Purity excludes ~2000 ppm Zirconium
InChI	1S/4C3H8N.Hf/c41-3-4-2;/h43H2,1-2H3;/q4*-1;+4
InChI key	NPEOKFBCHNGLJD-UHFFFAOYSA-N
mp	<-50 °C
Quality Level	200
reaction suitability	core: hafnium
SMILES string	CCN(C)[Hf](N(C)CC)(N(C)CC)N(C)CC

Application:	TEMAH is used as a precursor for atomic layer deposition (ALD)of hafnium oxide (HfO₂) thin films. Because HfO₂ has a high dielectric constant of 16-25, it is commonly used as a dielectric film in semiconductor fabrication. TEMAH is ideal for ALD because of its low boiling point and its reactivity with water and ozone. Most importantly, its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), and Si(100). Researchers have also used it to deposit thin films ofHfO₂ on 2D materials, like MoS₂. TEMAH is also useful precursor in the synthesis of ferroelectric hafnium zirconium oxide and Hf₁-xZrxO₂ thin films on MoS₂ phototransistors. Researchers have also deposited thin films of hafnium nitride (Hf₃N₄) by ALD alternatively pulsing TEMAH and ammonia.
Features and Benefits:	• Thermally stable. • It has sufficient volatility and is suitable for use in vapor deposition. • Completely self-limiting surface reactions.
General description:	Tetrakis(ethylmethylamido)hafnium(IV) (TEMAH) is a colorlessliquid that is sensitive to water and air. It freezes at -50 °C and boilsaround 78 °C at 0.1 Torr.
Packaging:	5, 25 mL in ampule

Symbol	GHS02
Signal word	Danger
Hazard statements	H225 - H261
Precautionary statements	P210 - P223 - P231 + P232 - P233 - P240 - P241
Hazard Codes	F,Xi
Risk Statements	11-14-36/37/38
Safety Statements	16-26-36
RIDADR	UN3398 - DOT UN3399 class 4.3 - PG 1 - Organometallic substance,
WGK Germany	WGK 3
Flash Point(F)	51.8 °F - closed cup
Flash Point(C)	11 °C - closed cup
Supplemental Hazard Statements	EUH014

Purity	≥99.99% trace metals basis
bp	78 °C/0.01 mmHg (lit.)
mp	<-50 °C
Density	1.324 g/mL at 25 °C (lit.)
UNSPSC	12352300

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