Tetrakis(ethylmethylamido)zirconium(IV)

ALDRICH/553131 - ≥99.99% trace metals basis

Synonym: TEMAZ; Tetrakis(ethylmethylamino)zirconium(IV)

CAS Number: 175923-04-3
Empirical Formula (Hill Notation): C₁₂H₃₂N₄Zr
Molecular Weight: 323.63
MDL Number: MFCD03427131
Linear Formula: Zr(NCH₃C₂H₅)₄
Product Type: Chemical

Catalog Number	PKG Qty.	Price	Quantity


45-553131-5G	5 g	$420.00 1/EA		Add To Favorites

Properties
Descriptions
Safety Info.
Basic Data

assay	≥99.99% trace metals basis
bp	81 °C/0.1 mmHg (lit.)
density	1.049 g/mL at 25 °C (lit.)
form	liquid
InChI	1S/4C3H8N.Zr/c41-3-4-2;/h43H2,1-2H3;/q4*-1;+4
InChI key	SRLSISLWUNZOOB-UHFFFAOYSA-N
Quality Level	200
reaction suitability	core: zirconium
SMILES string	CCN(C)[Zr](N(C)CC)(N(C)CC)N(C)CC

Application:	Tetrakis(ethylmethylamido)zirconium(IV) is used • As a Zirconium precursor in atomic layer deposition (ALD) to create ZrO_₂nanocoatings on cathode-active materials, enhancing interfacial stability and electrochemical performance in solid-state battery applications. • As an organometallic precursor in low-temperature solution processing to synthesize chalcogenide perovskite films, facilitating the formation of carbon-free, oxygen-free BaZrS_₃ for optoelectronic applications. • As a precursor in plasma-enhanced atomic layer deposition to fabricate high-quality ZrO_₂-containing Hf_ₓZr_₁₋ₓO_₂ thin films, for advanced ferroelectric memory device applications. We also provide the same materials in 10 g quantities, packaged in stainless steel cylinders(725528).
Features and Benefits:	• High-purity (≥99.99% trace metals basis) precursors to prevent impurities from affecting film properties. • Analyzing 32+ elements at ppb levels ensures suitability for forming uniform films in semiconductor applications. • Offers <10 ppm chloride by ion chromatography, crucial for high-quality films in semiconductor applications. Chloride can adversely affect film quality by altering composition, increasing surface roughness, introducing defects that degrade electrical performance, and impairing adhesion, leading to delamination or cracking.
General description:	Tetrakis(ethylmethylamino)zirconium (TEMAZ or TEMAZr) is a colorless, thermally stable organozirconium MOCVD compound. It is soluble in non-polar solvents such as petroleum ether and dichloromethane, but insoluble in water. TEMAZ is widely used as a zirconium precursor in semiconductor manufacturing. We provide it with ≥99.99% purity on a trace metals basis, ensuring ppb-level trace metal impurities, making it suitable for high-quality thin films.
Packaging:	5 g in ampule

Symbol	GHS02,GHS07
Signal word	Danger
Hazard statements	H225 - H261 - H315 - H319 - H335
Precautionary statements	P210 - P231 + P232 - P302 + P352 - P305 + P351 + P338
Hazard Codes	F,Xi
Risk Statements	11-14/15-36/37/38
Safety Statements	16-26-36
RIDADR	UN3398 - DOT UN3399 class 4.3 - PG 2 - Organometallic substance,
WGK Germany	WGK 3
Flash Point(F)	50.0 °F - closed cup
Flash Point(C)	10 °C - closed cup

Purity	≥99.99% trace metals basis
bp	81 °C/0.1 mmHg (lit.)
Density	1.049 g/mL at 25 °C (lit.)
UNSPSC	12352103

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