Silicon carbide
ALDRICH/594911 - nanopowder, <100 nm particle size
Synonym: Carbon silicide; Carborundum; Methanidylidynesilanylium; Silicon monocarbide
CAS Number: 409-21-2
Empirical Formula (Hill Notation): CSi
Molecular Weight: 40.10
EC Number: 206-991-8
MDL Number: MFCD00049531
Linear Formula: SiC
Product Type: Chemical
bulk density | 0.069 g/cm3 |
density | 3.22 g/mL at 25 °C (lit.) |
form | nanopowder |
InChI | 1S/CSi/c1-2 |
InChI key | HBMJWWWQQXIZIP-UHFFFAOYSA |
mp | 2700 °C (lit.) |
particle size | <100 nm |
SMILES string | [C-]#[Si+] |
surface area | 70-90 m2/g |
Application: | • Overview of silicon carbide power devices: This document provides a comprehensive review of the characteristics and applications of silicon carbide (SiC) in power devices, discussing its advantages over traditional silicon devices in handling high voltages and efficiencies (Choi, 2016 ). |
General description: | Silicon carbide (SiC), also known as carborundum, is composed of silicon and carbon, forming a hard refractory ceramic material that exhibits extreme mechanical and thermal stability. This product is a SiC nanopowder with a particle size less than 100 nm and a high surface area of 70-90 m2/g. Our product is primarily made of the beta phase with approximately 3-15% adopting an amorphous structure. With a Mohs scale hardness of 9.5, silicon carbide is one of the hardest materials, which make its nanopowder useful in the production of abrasives for polishing and grinding and as a coating or composite material for high wear-resistance. SiC nanoparticles are also under research as sensors and imaging nanoprobes for bioscience and clinical diagnosis. |
Packaging: | 100, 250 g in poly bottle |
Physical form: | primarily beta phase (3-15% amorphous) |
RIDADR | NONH for all modes of transport |
WGK Germany | WGK 3 |
Flash Point(F) | Not applicable |
Flash Point(C) | Not applicable |
mp | 2700 °C (lit.) |
Density | 3.22 g/mL at 25 °C (lit.) |
UNSPSC | 12352302 |