Indium(III) oxide
ALDRICH/632317 - nanopowder, <100 nm particle size (TEM), 99.9% trace metals basis
Synonym: Diindium trioxide; Indium sesquioxide
CAS Number: 1312-43-2
Empirical Formula (Hill Notation): In2O3
Molecular Weight: 277.63
EC Number: 215-193-9
MDL Number: MFCD00011060
Linear Formula: In2O3
Product Type: Chemical
| assay | 99.9% trace metals basis |
| density | 7.18 g/mL at 25 °C (lit.) |
| form | nanopowder |
| InChI | 1S/2In.3O |
| InChI key | SHTGRZNPWBITMM-UHFFFAOYSA |
| particle size | <100 nm (TEM) |
| reaction suitability | reagent type: catalyst core: indium |
| SMILES string | O=[In]O[In]=O |
| vapor pressure | <0.01 mmHg ( 25 °C) |
| Application: | • Amine Functionalized Surface Frustrated Lewis Pairs for CO2 Photocatalysis: Discusses the enhancement of photocatalytic performance for CO2 reduction using indium oxide hydroxide with amine-functionalized surface frustrated Lewis pairs (Q Guan et al., 2024   ).• Enhancing Gas Sensing Performance through UV Photoexcitation: Explores the improvement of room-temperature gas sensing capabilities of metal oxide semiconductor chemiresistors, including indium(III) oxide, by 400 nm UV photoexcitation (S Paul et al., 2024 ).• Indium(III) Complexes in Industry and Nanoparticle Synthesis: Reviews the use of trivalent indium complexes as catalysts and precursors for various industrial applications and the synthesis of nanoparticles like indium oxide (TO Ajiboye et al., 2024 ).• Ag/In2O3 Inverse Opal Synthesis: Details the synthesis and perspectives of silver/indium oxide inverse opal structures, highlighting their potential in semiconductor applications due to their optical properties (AV Lyutova et al., 2024 ).• Photocatalytic Generation of Hydroxyl Radicals and Manganese Species: Investigates the use of indium oxide in enhancing the photocatalytic performance of permanganate for efficient micropollutant removal under visible light (J Li et al., 2024 ). |
| General description: | Indium(III)oxide is a versatile compound with significant applications in electronics,optics, and materials science. It is widely employed in the synthesis of transparentconducting oxides (TCOs), particularly for flat-panel displays, and solarcells, due to its electrical conductivity and optical transparency. Insemiconductor technology, it is used for making indium tin oxide (ITO),enhancing the performance of electronic devices, and is sensitive to variousgases, making it suitable for gas sensing applications, particularly indetecting hazardous gases. |
| Packaging: | 5, 25 g in glass bottle |
| Hazard Codes | Xi |
| Risk Statements | 36/37/38 |
| Safety Statements | 26-36 |
| RIDADR | NONH for all modes of transport |
| WGK Germany | WGK 3 |
| Flash Point(F) | Not applicable |
| Flash Point(C) | Not applicable |
| Purity | 99.9% trace metals basis |
| Density | 7.18 g/mL at 25 °C (lit.) |
| UNSPSC | 12352302 |