Aluminum oxide
ALDRICH/634875 - single crystal substrate, <0001>
Synonym: Sapphire; Alumina
CAS Number: 1344-28-1
Empirical Formula (Hill Notation): Al2O3
Molecular Weight: 101.96
EC Number: 215-691-6
MDL Number: MFCD00003424
Linear Formula: Al2O3
Product Type: Chemical
| description | Crystallographic D spacing ((0001) - c plane: 2.165 Angstrom) |
| Crystallographic D spacing ((1011) - s plane: 1.961 Angstrom) | |
| Crystallographic D spacing ((1040) - m plane: 1.375 Angstrom) | |
| Crystallographic D spacing ((1102) - r plane: 1.740 Angstrom) | |
| Crystallographic D spacing ((1120) - a plane: 2.379 Angstrom) | |
| Crystallographic D spacing ((1123) - n plane: 1.147 Angstrom) | |
| single side polished | |
| form | single crystal substrate |
| hardness | 9 mohs |
| InChI | 1S/2Al.3O |
| InChI key | TWNQGVIAIRXVLR-UHFFFAOYSA |
| L × W × thickness | 10 mm × 10 mm × 0.5 mm |
| mp | 2040 °C (lit.) |
| semiconductor properties | <0001> |
| SMILES string | O=[Al]O[Al]=O |
| Features and Benefits: | Common substrate for III-V nitrides as well as many other epitaxial films. |
| Packaging: | 1, 5 ea in rigid mailer |
| Physical form: | Crystalline, hexagonal (a = 4.758 Å, c = 12.992) |
| Physical properties: | thermal expansion = 7.5 × 10-6 /°C; specific heat = 0.10 cal/°C; thermal conductivity = 46.06 @ 0 °C, 25.12 @ 100 °C, 12.56 @ 400 °C (W/m,K); dielectric constant = ~9.4 @ 300 K at A axis, ~11.58 @ C axis; loss tangent at 10 GHz < 2 × 10-5 at A axis, 5 × 10-6 at C axis |
| RIDADR | NONH for all modes of transport |
| WGK Germany | nwg |
| Flash Point(F) | Not applicable |
| Flash Point(C) | Not applicable |
| mp | 2040 °C (lit.) |
| UNSPSC | 12352303 |