Silicon
ALDRICH/646687 - wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Synonym: Silicon element
CAS Number: 7440-21-3
Empirical Formula (Hill Notation): Si
Molecular Weight: 28.09
EC Number: 231-130-8
MDL Number: MFCD00085311
Linear Formula: Si
Product Type: Chemical
bp | 2355 °C (lit.) |
density | 2.33 g/mL at 25 °C (lit.) |
diam. × thickness | 2 in. × 0.5 mm |
does not contain | dopant |
form | crystalline (cubic (a = 5.4037)) |
wafer (single side polished) | |
InChI | 1S/Si |
InChI key | XUIMIQQOPSSXEZ-UHFFFAOYSA |
mp | 1410 °C (lit.) |
semiconductor properties | <100>, N-type |
SMILES string | [Si] |
Application: | • Innovative Solutions for High-Performance Silicon Anodes in Lithium-Ion Batteries: Overcoming Challenges and Real-World Applications.: This article addresses the challenges and real-world applications of high-performance silicon anodes in lithium-ion batteries, presenting innovative solutions to enhance their efficiency (Khan et al., 2024 ). • Strain Engineering: Perfecting Freestanding Perovskite Oxide Fabrication.: This research focuses on strain engineering to improve the fabrication of freestanding perovskite oxides, which are crucial for various high-purity silicon applications in academia (Yun et al., 2024 ). |
General description: | Silicon wafers or a “slice” of substrate find applications in the fabrication of integrated circuits, solar cells etc. They serve as a substrate for various microelectronic devices. |
Packaging: | 1, 5 ea in rigid mailer |
Physical properties: | 0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 - 3000 Ωcm |
Physical properties: | Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″ |
RIDADR | NONH for all modes of transport |
WGK Germany | WGK 3 |
Flash Point(F) | Not applicable |
Flash Point(C) | Not applicable |
bp | 2355 °C (lit.) |
mp | 1410 °C (lit.) |
Density | 2.33 g/mL at 25 °C (lit.) |
UNSPSC | 12352300 |