Gallium arsenide
ALDRICH/651486 - (single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm
Synonym: Gallium monoarsenide
CAS Number: 1303-00-0
Empirical Formula (Hill Notation): AsGa
Molecular Weight: 144.64
EC Number: 215-114-8
MDL Number: MFCD00011017
Linear Formula: GaAs
Product Type: Chemical
| density | 5.31 g/mL at 25 °C (lit.) |
| diam. × thickness | 2 in. × 0.5 mm |
| form | (single crystal substrate) |
| InChI | 1S/As.Ga |
| InChI key | JBRZTFJDHDCESZ-UHFFFAOYSA |
| Quality Level | 100 ![]() |
| resistivity | ≥1E7 Ω-cm |
| semiconductor properties | <100> |
| SMILES string | [Ga]#[As] |
| General description: | Mobility >=4500 cm2 · V-1 · S-1 |
| General description: | Undoped (Si-type semiconductor), EPD < 5 × 104 cm-2, growth technique = LEC & HB |
| Packaging: | 1 ea in rigid mailer |
| Physical form: | cubic (a = 5.6533 Å) |
| Symbol | GHS08 |
| Signal word | Danger |
| Hazard statements | H350 - H372 |
| Precautionary statements | P201 - P308 + P313 |
| Hazard Codes | T |
| Risk Statements | 45-48/23 |
| Safety Statements | 53-45 |
| RIDADR | UN 1557 6.1 / PGII |
| WGK Germany | WGK 3 |
| Flash Point(F) | Not applicable |
| Flash Point(C) | Not applicable |
| Density | 5.31 g/mL at 25 °C (lit.) |
| UNSPSC | 12352300 |


