Tetraethyl orthosilicate
ALDRICH/759414 - packaged for use in deposition systems
Synonym: Tetraethyl orthosilicate; Orthosilicic acid tetraethyl ester; Silicon tetraethoxide; Tetraethoxysilane; Tetraethoxysilicon(IV); Tetraethyl silicate; Orthosilicic acid tetraethyl ester; TEOS; Tetraethoxysilane
CAS Number: 78-10-4
Empirical Formula (Hill Notation): C8H20O4Si
Molecular Weight: 208.33
EC Number: 201-083-8
MDL Number: MFCD00009062
Linear Formula: Si(OC2H5)4
Product Type: Chemical
assay | ≥99.5% (GC) |
bp | 168 °C (lit.) |
density | 0.933 g/mL at 20 °C (lit.) |
form | liquid |
InChI | 1S/C8H20O4Si/c1-5-9-13(10 |
InChI key | BOTDANWDWHJENH-UHFFFAOYSA |
refractive index | n |
SMILES string | CCO[Si](OCC)(OCC)OCC |
vapor density | 7.2 (vs air) |
vapor pressure | <1 mmHg ( 20 °C) |
Application: | Commonly used as a precursor to prepare xerogel |
Application: | Tetraethyl orthosilicate (TEOS) is an oxygen containing precursor of Si used for the deposition of: • Si oxide • Oxycarbide • Doped silicate • Silanol • Siloxane polymer • Organosilicon thin films The films can be deposited at low temperatues (<250 °C). TEOS is also used to deposit mesoporous and nanoporous thin films of silica. These porous films can be doped during deposition to further enhance their properties. |
Application: | Will interact with dodecylamine in the formation of intercalation compounds of H+-magadiite and used in a study of mixed-metal bioactive glasses. |
Packaging: | 25 mL in stainless steel cylinder |
Symbol | GHS02,GHS07 |
Signal word | Warning |
Hazard statements | H226 - H319 - H332 - H335 |
Precautionary statements | P210 - P233 - P240 - P241 - P304 + P340 + P312 - P305 + P351 + P338 |
Hazard Codes | Xn |
Risk Statements | 10-20-36/37 |
RIDADR | UN1292 - class 3 - PG 3 - Tetraethyl silicate |
WGK Germany | WGK 1 |
Flash Point(F) | 113.0 °F - closed cup |
Flash Point(C) | 45 °C - closed cup |
Purity | ≥99.5% (GC) |
bp | 168 °C (lit.) |
Density | 0.933 g/mL at 20 °C (lit.) |
Refractive Index | n |
UNSPSC | 12352103 |