Monolayer graphene film
ALDRICH/799009 - 1 in x 1 in on copper foil, avg. no. of layers, 1
Synonym: Graphene/Cu
Product Type: Chemical
color | transparent |
description | Coverage: >95% |
FET Electron Mobility on Al2O3: 2;000 cm2/V·s | |
FET Electron Mobility on SiO2/Si (expected): 4; 000 cm2/V·s | |
Grain size: Up to 10 μm | |
Number of graphene layers: 1 | |
Transparency: >97% | |
feature | avg. no. of layers 1 |
form | film |
L × W × thickness | 1 in. × 1 in. × (theoretical) 0.245 nm, monolayer graphene film |
1 in. × 1 in. × 18 μm, copper foil substrate | |
Quality Level | 100 |
resistance | 350 Ω/sq |
Application: | Graphene may be extensively incorporated in several applications, such as; nanoelectronics, fuel cells, solar cell, photovoltaic devices, in biosensing, optical biosensors, MEMS, NEMS, field effect transistors (FETs), chemical sensors, nanocarriers in biosensing assays. |
General description: | Graphene is a unique one atom thick, two dimensional allotrope of carbon. Among all the synthesis techniques, chemical vapor deposition of graphene on copper foil is the most promising route for the large scale production of good quality graphene. Catalytic decomposition of hydrocarbons over copper foil renders monolayer graphene. Graphene deposits as a continuous polycrystalline sheet of individual graphene grains joined at grain boundaries. The epitaxial relationship between graphene and copper foil has been reported. Large uniform graphene domains may be accountable to the large grain size growth which results because of the low carbon solubility of copper and close melting point of copper and graphene growth temperatures. |
General description: | Growth Method: CVD synthesis Transfer Method: Clean transfer method Quality Control: Optical Microscopy & Raman checked |
Packaging: | 1 ea in rigid mailer |
RIDADR | NONH for all modes of transport |
WGK Germany | WGK 3 |
Flash Point(F) | Not applicable |
Flash Point(C) | Not applicable |
UNSPSC | 12352103 |