Buffered oxide etchant (BOE) 6:1 with surfactant
ALDRICH/901623
Synonym: BHF; Buffered HF
Product Type: Chemical
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| form | liquid |
| Application: | Buffered oxide etchant (BOE) 6:1 with surfactant may be used in the oxide removal of AlGaN/GaN-based high electron mobility transistors for gate photolithography. It may also be used in a buffer oxide etchant method for the fabrication of micro biochip. |
| General description: | Buffered oxide etchant (BOE) is a wet etchant used in microfabrication. Its primary use is in etching thin films of silicon dioxide (SiO2) or silicon nitride (Si3N4). It is a mixture of a buffering agent, such as ammonium fluoride (NH4F), and hydrofluoric acid (HF). Concentrated HF etches silicon dioxide too quickly for good process control and also peels photoresist used in lithographic patterning. |
| Symbol |   GHS05,GHS06 |
| Signal word | Danger |
| Hazard statements | H300 + H310 + H330 - H314 |
| Precautionary statements | P260 - P270 - P280 - P303 + P361 + P353 - P304 + P340 + P310 - P305 + P351 + P338 |
| RIDADR | UN 1790B 6.1(8) / PGII |
| WGK Germany | WGK 2 |
| Flash Point(F) | Not applicable |
| Flash Point(C) | Not applicable |
| UNSPSC | 12161700 |