PBDB-T-2F
ALDRICH/906336
Synonym: PCE135; PM6; Poly[[4,8-
CAS Number: 1802013-83-7
Linear Formula: (C68H76F2O2S8)n
Product Type: Chemical
This picture is provided solely for illustration purposes. Optical properties of the actual product may deviate. Relevant product information is printed on labeled products and other accompanying or available information material. This image depicts SKU: 906336-100MG.
| color | Fine |
| description | Band gap: 1.9 eV |
| form | particles |
| mol wt | Mw 80,000-200,000 g/mol by GPC |
| orbital energy | HOMO -5.5 eV |
| LUMO -3.6 eV | |
| PDI | 2‑4 |
| solubility | chlorobenzene: soluble |
| chloroform: soluble | |
| dichlorobenzene: soluble |
| Application: | High-Efficiency Organic Solar Cells (OPVs) Polymeric donor material LUMO=−3.6 eV HOMO=−5.5 eV OPV Device Performance: PBDB-T-2F: ITIC-F (1:1 w/w) Voc= 0.84V Jsc= 22.2 mA/cm2 FF= 0.725 PCE=13.5% PBDB-T-2F (or PM6) is a wide bandgap polymer donor (n-type semiconductor) containing fluorinated thienyl benzodithiophene (BDT-2F) used in high performance polymer solar cells (PSCs). PBDB-T-2F possesses high crystallinity and strong π-π stacking alignment, which are favourable to charge carrier transport and hence suppress recombination in devices. PBDBT-2F based PSCs were reported to have thickness and area insensitive performance and is a promising candidate for large-scale roll-to-roll manufacturing of high-efficiency polymer solar cells. For example, recently, new study have shown PBDB-T-2F:IT-4F(Sigma Aldrich Cat. No. 901423) based PSCs yielded an impressive PCE of 13.5% due to the synergistic effect of fluorination on both donor and acceptor, which is among the highest values recorded in the literatures for PSCs to date [1]. The PBDB-T-2F:IT-4F baed PSCs also showed good storage, thermal and illumination stabilities with respect to the efficiency. High efficiency of >11% was maintained for a wide range of film area and thickness. When paired with selenopheno[3,2-b]thiophene-based narrow-bandgap non-fullerene acceptor, an impressive efficiency of 13.3 % was obtained with thickness-insensitive feature. It has also been previously reported, PBDB-T-2F when paired with narrow band-gap small molecule acceptor 2,2′-((2Z,2′Z)-((4,4,9,9- It has also been reported, PBDB-T-2F possesses a strong absorption in the short wavelength region of 300-685 nm with a large bandgap of 1.80 eV, which is complementary to that of ITIC (1.55 eV) and facilitates achieving high short-circuit current (Jsc) in PSCs. Moreover, PBDB-T-2F shows a deep HOMO level of −5.50 eV, a strong crystallinity and a dominant face on packing, which helps to achieve a high open-circuit voltage (Voc) and fill factor (FF) in PSCs. |
| Application: | PBDB-T-2F can be used as the active semiconductor layer in OFET devices. PBDB-T-2F can serve as the donor material in the photoactive layer of OPV devices. It exhibits abroad absorption spectrum, allowing it to absorb light across a wide range of wavelengths, including visible and near-infrared regions. |
| WGK Germany | WGK 3 |
| Flash Point(F) | Not applicable |
| Flash Point(C) | Not applicable |
| UNSPSC | 12352101 |