Graphene FET chip
ALDRICH/GRFETS10 - S10
Synonym: Graphene FET; Graphene FET sensor; Graphene FET with 30 Hall-bar devices and 6 2-probe configurations with varied channel geometry
Product Type: Chemical
| description | Dirac point:< 50 V |
| Gate Oxide material: SiO2 | |
| Gate Oxide thickness: 90 nm | |
| Graphene field-effect mobility: >1000 cm2/V·s | |
| Maximum gate-source voltage: ± 50 V Maximum temperature rating: 150 °C Maximum drain-source current density: 107 A/cm2 |
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| Metallization: Chromium 2 nm/Gold 50 nm | |
| Monolayer CVD grown Graphene based field effect transistors (FET) S10 | |
| Residual charge carrier density: <2 x 1012 cm-2 | |
| Resistivity of substrate: 1-10 Ω·cm | |
| Yield >75% |
| Application: | • Graphene device research • FET based sensor research for active materials deposited on graphene • Chemical sensors • Biosensors • Bioelectronics • Magnetic sensors • Photodetectors |
| Application: | GFET-S10 chip can be used as a biosensor and a chemical sensor for biological applications. |
| Caution: | Basic handling instructions:The monolayer CVD graphene used in this FET device is highly prone to damage by external factors. To maintain the quality of the devices, we recommend taking the following precautions: • Be careful when handling the graphene FET chip. • Tweezers should not contact the device area directly. |
| Features and Benefits: | Device Features: • State-of-art graphene FETs utilizing consistent high-quality CVD grown monolayer graphene • Devices are not encapsulated and can be functionalized by additives • Perfect platform for sensor research and development • 36 individual graphene FETs per chip • Mobilities typically > 1000 cm2/V·s |
| General description: | Device configuration: This Graphene FET chip provides 36 graphene devices distributed in a grid pattern on the chip. 30 devices have Hall-bar geometry and 6 have 2-probe geometry. The Hall-bar devices can be used for Hall measurements as well as 4-probe and 2-probe measurements. There are graphene channels with varied dimensions to allow systematic investigation of device properties. |
| General description: | Graphene FET chip (GFET-S10 chip) is a graphene based field effect transistor chip with a symmetric transconductance of 8 μS and an operational current density of 105 A/cm2. The fabricated device has a monolayered graphene which is coated by chemical vapor deposition (CVD) on silicon substrate. It also has similar gate insulators in the source and drain. |
| WGK Germany | WGK 3 |
| Flash Point(F) | Not applicable |
| Flash Point(C) | Not applicable |
| UNSPSC | 43211915 |