Graphene FET chip
ALDRICH/GRFETS20 - S20
Synonym: 2-probe FET device; 2-probe Graphene FET sensor; Chemical gated Graphene FET; GFET S20; Graphene field effect transistor chip S20
Product Type: Chemical
Typical output curve measured at room temperature in vacuum on a device with W=L=50 μm
Typical transfer curve measured at source-drain voltage of 20 mV, at room temperature in vacuum on a device with W=L=50 μm.
| description | Absolute Maximum Ratings Maximum gate-source voltage: ± 50 V Maximum temperature rating: 150 °C Maximum drain-source current density: 107 A/cm2 |
| Chip dimensions: 10 mm x 10 mm | |
| Chip thickness: 675 μm | |
| Dirac point: < 50 V Yield >75% |
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| Encapsulation: 50 nm Al2O3 + 100 nm Si3N4 | |
| Gate oxide materials: 90 nm SiO2 | |
| Graphene field-effect mobility: >1000 cm2/V·s | |
| Monolayer CVD grown Graphene based 2-probe field effect transistors (FET). | |
| Number of devices per chip: 12 | |
| Resistivity of substrate: 1-10 Ω·cm Metallization: Chromium/Gold-Palladium 2/50 nm |
| Application: | • Bioelectronics • FET based sensor research for active materials deposited on graphene • Clinical applications • Biosensors |
| Application: | GFET-S20 chip can be used as a biosensor and a chemical sensor for biological applications. |
| Features and Benefits: | Device Features: • State-of-the-art GFETs utilizing consistently high-quality CVD monolayer graphene • Metallic contacts and metal/graphene interface are encapsulated to avoid degradation and reduce leakage current in liquid environment • Perfect platform device for new sensor research and development • 12 individual GFETs per chip • A central gate electrode |
| General description: | Device configuration: The graphene FET-S20 chip is designed for measurements in liquid medium. This chip provides 12 graphene devices, with encapsulation on the metal pads to avoid degradation and reduce leakage currents, and the probe pads located near the periphery of the chip. It also includes a non-encapsulated electrode at the center of the chip, which allows liquid gating without the need of an external gate electrode. |
| General description: | Graphene FET chip (GFET-S20 chip) is a graphene based field effect transistor which can be coated on silicon substrate by atmospheric pressure chemical vapor deposition (CVD). It also has similar gate insulators in the source and drain. |
| WGK Germany | WGK 3 |
| Flash Point(F) | Not applicable |
| Flash Point(C) | Not applicable |
| UNSPSC | 43211915 |