Phosphorus implant in silicon depth profile standard
SIAL/NIST2133 - NIST® SRM® 2133
Product Type: Chemical
| application(s) | semiconductor |
| format | matrix material |
| grade | certified reference material |
| manufacturer/tradename | NIST® |
| packaging | pkg of each |
| Quality Level | 100 ![]() |
| Application: | The SRM is intended to calibrate the secondary ion response for minor and trace concentrations of phosphorus within a silicon matrix using the secondary ion mass spectrometry (SIMS) method. |
| Features and Benefits: | • Available with certificate documenting NIST-certified retained dose of 31P atoms which is obtained through radiochemical neutron activation analysis (RNAA). • The NIST certificate is provided with expiration certificate, storage, handling, use, and maintenance instructions. |
| General description: | The SRM contains a single crystal silicon substrate measuring 1 cm × 1 cm, which is ion-implanted with the isotope 31P at a nominal energy of 100 keV. SRM 2133_cert ![]() SRM 2133_SDS ![]() |
| Legal Information: | NIST is a registered trademark of National Institute of Standards and Technology |
| Legal Information: | SRM is a registered trademark of National Institute of Standards and Technology |
| Other Notes: | Example analytes are listed below as a reference. Please download a current certificate at nist.gov/SRM for current analytes and certified values. Phosphorus (31P) |
| RIDADR | NONH for all modes of transport |
| WGK Germany | WGK 3 |
| Flash Point(F) | Not applicable |
| Flash Point(C) | Not applicable |
| UNSPSC | 41116107 |

