aldrich Brand
Displaying 12801-12850 of 68619 results.
| Sigma Cat.No. | Description |
|---|---|
| 646679 | 1,1,2- Dye content 90 % |
| 646687 | Silicon wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm |
| 646733 | 5- 97% |
| 646830 | 2- 97% |
| 64685 | Methoxyacetaldehyde dimethyl acetal ≥98.0% (GC) |
| 646938 | N- 97% |
| 646962 | 4- 97% |
| 646989 | 6- 96% |
| 647004 | 2- 97% |
| 647055 | 4,4-Diethoxy-N,N- |
| 647063 | Poly((4,4′-carbonylbis(1,2-benzenedicarboxylic acid))-alt-(4,4′-methylenedianiline) ~18 wt. % in solution |
| 647098 | Phenylboronic acid pinacol ester 97% |
| 647101 | Silicon wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm |
| 647136 | 5- 97% |
| 647187 | 5-Bromophthalide 97% |
| 647195 | 5-Cyanophthalide 97% |
| 647209 | 4- 97% |
| 647292 | 4- ≥95% |
| 647373 | 2,3-Dibromobenzo[b]thiophene 97% |
| 647381 | 7- 97% |
| 647446 | (S)-(−)-2-Aminomethyl-1-ethylpyrrolidine 96% |
| 647535 | Silicon wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm |
| 647543 | Silicon wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm |
| 647594 | Methyl 4- 98% |
| 64760 | 4-Methoxyazobenzene ≥98.0% |
| 647608 | 4-Hydroxy-3-methoxy-α-methylbenzyl alcohol 97% |
| 647616 | Methyl 4- 97% |
| 647624 | 4- 97% |
| 647640 | Zirconium(IV) chloride powder, 99.99% trace metals basis |
| 647659 | Acetophenone oxime 95% |
| 647675 | Silicon wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm |
| 647705 | Silicon wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm |
| 647756 | 1- 97% |
| 647764 | Silicon wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm |
| 647772 | Silicon wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm |
| 647780 | Silicon wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm |
| 647799 | Silicon wafer (single side polished), contains phosphorus as dopant, <111>, N-type, diam. × thickness 2 in. × 0.5 mm |
| 647802 | Silicon wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm |
| 647829 | PAMAM dendrimer, cystamine core, generation 2.0 solution 20 wt. % in methanol |
| 648116 | Methyl 3- 97% |
| 648159 | PAMAM dendrimer, cystamine core, generation 5, solution 10 wt. % in methanol |
| 648418 | (−)-DIP-Chloride™ solution 50-65 wt. % in heptane |
| 648434 | 1- 97% |
| 648574 | Sulfur-34S 99 atom % 34S |
| 648612 | 2′-Deoxycytidine-13C9,15N3 5′-monophosphate disodium salt ≥98 atom %, ≥95% (CP) |
| 648620 | 2′-Deoxyadenosine-13C10,15N5 5′-monophosphate disodium salt ≥98 atom %, ≥95% (CP) |
| 648639 | 2,4-Pentanedione, polymer-bound 100-200 mesh particle size, extent of labeling: 2.5-3.5 mmol/g O loading, 2 % cross-linked with divinylbenzene |
| 648663 | Bis(ethylcyclopentadienyl) |
| 648701 | 4- 96% |
| 648787 | Isopropylboronic acid ≥95% |